NDD02N60Z-1G onsemi
Артикул
NDD02N60Z-1G
Бренд
onsemi
Описание
MOSFET N-CH 600V 2.2A IPAK, N-Channel 600 V 2.2A (Tc) 57W (Tc) Through Hole I-PAK
Цена
47 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/NDD02N60Z-1G.jpg
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
2.2A (Tc)
Power Dissipation (Max)
57W (Tc)
FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
274 pF @ 25 V
Drain to Source Voltage (Vdss)
600 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.8Ohm @ 1A, 10V
Vgs(th) (Max) @ Id
4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs
10.1 nC @ 10 V
Vgs (Max)
±30V
Supplier Device Package
I-PAK
Other Names
NDD02N60Z-1G-ND,NDD02N60Z1G,NDD02N60Z-1GOS,ONSONSNDD02N60Z-1G,2156-NDD02N60Z-1G-ON
Base Product Number
NDD02
Series
-
Package
Tube
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
75
FET Feature
-
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