NDDP010N25AZ-1H onsemi
Артикул
NDDP010N25AZ-1H
Бренд
onsemi
Описание
MOSFET N-CH 250V 10A IPAK/TP, N-Channel 250 V 10A (Ta) 1W (Ta), 52W (Tc) Through Hole IPAK/TP
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/NDDP010N25AZ-1H.jpg
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
10A (Ta)
Power Dissipation (Max)
1W (Ta), 52W (Tc)
FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
980 pF @ 20 V
Drain to Source Voltage (Vdss)
250 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
420mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
16 nC @ 10 V
Vgs (Max)
±30V
Supplier Device Package
IPAK/TP
Other Names
NDDP010N25AZ-1HOS,ONSONSNDDP010N25AZ-1H,2156-NDDP010N25AZ-1H
Base Product Number
NDDP0
Series
-
Package
Tube
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
500
FET Feature
-
Узнайте актуальную цену на данный товар
Оставьте Ваши контактные данные и наш менеджер ответит вам в течение 15 минут