NDS356P onsemi
Артикул
NDS356P
Бренд
onsemi
Описание
MOSFET P-CH 20V 1.1A SUPERSOT3, P-Channel 20 V 1.1A (Ta) 500mW (Ta) Surface Mount SOT-23-3
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/NDS356P.jpg
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
1.1A (Ta)
Power Dissipation (Max)
500mW (Ta)
FET Type
P-Channel
Input Capacitance (Ciss) (Max) @ Vds
180 pF @ 10 V
Drain to Source Voltage (Vdss)
20 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
210mOhm @ 1.3A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
5 nC @ 5 V
Vgs (Max)
±12V
Supplier Device Package
SOT-23-3
Other Names
NDS356PCT,NDS356PCT-NDR,NDS356PTR-NDR,NDS356PTR
Base Product Number
NDS356
Series
-
Package
Tape & Reel (TR)Cut Tape (CT)
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Standard Package
3,000
FET Feature
-
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