NGTB15N60S1EG onsemi
Артикул
NGTB15N60S1EG
Бренд
onsemi
Описание
IGBT 600V 30A 117W TO220-3, IGBT NPT 600 V 30 A 117 W Through Hole TO-220AB
Цена
375 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - IGBTs - Single, IGBT транзисторы - одиночные
Image
files/NGTB15N60S1EG.jpg
Input Type
Standard
Current - Collector (Ic) (Max)
30 A
Voltage - Collector Emitter Breakdown (Max)
600 V
Power - Max
117 W
REACH Status
REACH Unaffected
Reverse Recovery Time (trr)
270 ns
IGBT Type
NPT
Vce(on) (Max) @ Vge, Ic
1.7V @ 15V, 15A
Current - Collector Pulsed (Icm)
120 A
Switching Energy
550µJ (on), 350µJ (off)
Gate Charge
88 nC
Td (on/off) @ 25°C
65ns/170ns
Supplier Device Package
TO-220AB
Other Names
NGTB15N60S1EG-ND,NGTB15N60S1EGOS
Series
-
Package
Tube
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
50
Base Product Number
NGTB15
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Test Condition
400V, 15A, 22Ohm, 15V
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