NSBC114YDXV6T1G onsemi
Артикул
NSBC114YDXV6T1G
Бренд
onsemi
Описание
TRANS PREBIAS 2NPN 50V SOT563, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA - 500mW Surface Mount SOT-563
Цена
72 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Транзисторы - биполярные (BJT) - массивы, с предварительным сопряжением
Image
files/NSBC114YDXV6T1G.jpg
Supplier Device Package
SOT-563
Transistor Type
2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Vce Saturation (Max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)
500nA
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 5mA, 10V
Power - Max
500mW
Frequency - Transition
-
Resistor - Base (R1)
10kOhms
Other Names
ONSFSCNSBC114YDXV6T1G,NSBC114YDXV6T1GOSCT,NSBC114YDXV6T1GOSDKR,NSBC114YDXV6T1GOS,NSBC114YDXV6T1GOS-ND,2156-NSBC114YDXV6T1G-OS,NSBC114YDXV6T1GOSTR
Base Product Number
NSBC114
Standard Package
4,000
Series
-
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.10.0070
Resistor - Emitter Base (R2)
47kOhms
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