NTBG020N090SC1 onsemi
Артикул
NTBG020N090SC1
Бренд
onsemi
Описание
SICFET N-CH 900V 9.8A/112A D2PAK, N-Channel 900 V 9.8A (Ta), 112A (Tc) 3.7W (Ta), 477W (Tc) Surface Mount D2PAK-7
Цена
5 615 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/NTBG020N090SC1.jpg
Base Product Number
NTBG020
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
900 V
Current - Continuous Drain (Id) @ 25°C
9.8A (Ta), 112A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V
Rds On (Max) @ Id, Vgs
28mOhm @ 60A, 15V
Vgs(th) (Max) @ Id
4.3V @ 20mA
Gate Charge (Qg) (Max) @ Vgs
200 nC @ 15 V
Vgs (Max)
+19V, -10V
Input Capacitance (Ciss) (Max) @ Vds
4415 pF @ 450 V
FET Feature
-
Supplier Device Package
D2PAK-7
Package / Case
TO-263-8, D?Pak (7 Leads + Tab), TO-263CA
Series
-
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
488-NTBG020N090SC1TR,488-NTBG020N090SC1CT,488-NTBG020N090SC1DKR
Standard Package
800
Power Dissipation (Max)
3.7W (Ta), 477W (Tc)
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