NTH027N65S3F_F155 onsemi
Артикул
NTH027N65S3F_F155
Бренд
onsemi
Описание
MOSFET N-CH 650V 75A TO247-3, N-Channel 650 V 75A (Tc) 595W (Tc) Through Hole TO-247-3
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/NTH027N65S3F_F155.jpg
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
75A (Tc)
Power Dissipation (Max)
595W (Tc)
FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
7690 pF @ 400 V
Drain to Source Voltage (Vdss)
650 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
27.4mOhm @ 35A, 10V
Vgs(th) (Max) @ Id
5V @ 7.5mA
Gate Charge (Qg) (Max) @ Vgs
259 nC @ 10 V
Vgs (Max)
±30V
Supplier Device Package
TO-247-3
Base Product Number
NTH027
Standard Package
450
Series
FRFET®, SuperFET® II
Package
Tube
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
FET Feature
-
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