NTLJF3117PT1G onsemi
Артикул
NTLJF3117PT1G
Бренд
onsemi
Описание
MOSFET P-CH 20V 2.3A 6WDFN, P-Channel 20 V 2.3A (Ta) 710mW (Ta) Surface Mount 6-WDFN (2x2)
Цена
78 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/NTLJF3117PT1G.jpg
Supplier Device Package
6-WDFN (2x2)
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
2.3A (Ta)
Power Dissipation (Max)
710mW (Ta)
FET Type
P-Channel
Input Capacitance (Ciss) (Max) @ Vds
531 pF @ 10 V
Drain to Source Voltage (Vdss)
20 V
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
100mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
6.2 nC @ 4.5 V
Vgs (Max)
±8V
Other Names
NTLJF3117PT1GOSTR,NTLJF3117PT1GOSDKR,NTLJF3117PT1G-ND,ONSONSNTLJF3117PT1G,NTLJF3117PT1GOSCT,=NTLJF3117PT1GOSCT-ND,2156-NTLJF3117PT1G-OS
Base Product Number
NTLJF3117
Series
µCool™
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
6-WDFN Exposed Pad
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Standard Package
3,000
FET Feature
Schottky Diode (Isolated)
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