NTMS10P02R2G onsemi
Артикул
NTMS10P02R2G
Бренд
onsemi
Описание
MOSFET P-CH 20V 8.8A 8SOIC, P-Channel 20 V 8.8A (Ta) 1.6W (Ta) Surface Mount 8-SOIC
Цена
312 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/NTMS10P02R2G.jpg
Supplier Device Package
8-SOIC
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
8.8A (Ta)
Power Dissipation (Max)
1.6W (Ta)
FET Type
P-Channel
Input Capacitance (Ciss) (Max) @ Vds
3640 pF @ 16 V
Drain to Source Voltage (Vdss)
20 V
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
14mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
70 nC @ 4.5 V
Vgs (Max)
±12V
Other Names
NTMS10P02R2GOSCT,2156-NTMS10P02R2G-OS,NTMS10P02R2GOS,NTMS10P02R2GOSDKR,NTMS10P02R2GOSTR,=NTMS10P02R2GOSCT-ND,NTMS10P02R2GOS-ND,ONSONSNTMS10P02R2G
Base Product Number
NTMS10
Series
-
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
2,500
FET Feature
-
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