NTY100N10 onsemi
Артикул
NTY100N10
Бренд
onsemi
Описание
MOSFET N-CH 100V 123A TO264, N-Channel 100 V 123A (Tc) 313W (Tc) Through Hole TO-264
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/NTY100N10.jpg
Supplier Device Package
TO-264
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
123A (Tc)
Power Dissipation (Max)
313W (Tc)
FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
10110 pF @ 25 V
Drain to Source Voltage (Vdss)
100 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
10mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
350 nC @ 10 V
Vgs (Max)
±20V
Other Names
2156-NTY100N10-ON,ONSONSNTY100N10
Base Product Number
NTY100
Series
-
Package
Tube
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-264-3, TO-264AA
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
25
FET Feature
-
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