NVBG020N120SC1 onsemi
Артикул
NVBG020N120SC1
Бренд
onsemi
Описание
MOSFET N-CH 1200V 8.6A/98A D2PAK, N-Channel 1200 V 8.6A (Ta), 98A (Tc) 3.7W (Ta), 468W (Tc) Surface Mount D2PAK-7
Цена
7 081 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/NVBG020N120SC1.jpg
Technology
SiCFET (Silicon Carbide)
Mounting Type
Surface Mount
FET Type
N-Channel
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
8.6A (Ta), 98A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
28mOhm @ 60A, 20V
Vgs(th) (Max) @ Id
4.3V @ 20mA
Gate Charge (Qg) (Max) @ Vgs
220 nC @ 20 V
Vgs (Max)
+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds
2943 pF @ 800 V
FET Feature
-
Standard Package
800
Other Names
488-NVBG020N120SC1CT,488-NVBG020N120SC1DKR,488-NVBG020N120SC1TR
Series
Automotive, AEC-Q101
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-263-8, D?Pak (7 Leads + Tab), TO-263CA
Supplier Device Package
D2PAK-7
Base Product Number
NVBG020
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Power Dissipation (Max)
3.7W (Ta), 468W (Tc)
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