NVD5117PLT4G onsemi
Артикул
NVD5117PLT4G
Бренд
onsemi
Описание
MOSFET P-CH 60V 11A/61A DPAK, P-Channel 60 V 11A (Ta), 61A (Tc) 4.1W (Ta), 118W (Tc) Surface Mount DPAK
Цена
265 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/NVD5117PLT4G.jpg
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
11A (Ta), 61A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
16mOhm @ 29A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
85 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4800 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
4.1W (Ta), 118W (Tc)
Supplier Device Package
DPAK
Other Names
NVD5117PLT4GOSCT,NVD5117PLT4GOSDKR,ONSONSNVD5117PLT4G,2156-NVD5117PLT4G-OS,NVD5117PLT4GOSTR
Series
Automotive, AEC-Q101
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Obsolete
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
2,500
Base Product Number
NVD511
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
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