PN100_G onsemi
Артикул
PN100_G
Бренд
onsemi
Описание
INTEGRATED CIRCUIT, Bipolar (BJT) Transistor NPN 45 V 500 mA 250MHz 625 mW Through Hole TO-92-3
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - Bipolar (BJT) - Single, Транзисторы - биполярные (BJT) - одиночные
Image
files/PN100_G.jpg
Base Product Number
PN100
Supplier Device Package
TO-92-3
Transistor Type
NPN
Current - Collector (Ic) (Max)
500 mA
Voltage - Collector Emitter Breakdown (Max)
45 V
Vce Saturation (Max) @ Ib, Ic
400mV @ 20mA, 200mA
Current - Collector Cutoff (Max)
50nA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA, 5V
Power - Max
625 mW
Standard Package
1
HTSUS
8541.21.0075
Series
-
Package
Bulk
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
Frequency - Transition
250MHz
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