RFD12N06RLE onsemi
Артикул
RFD12N06RLE
Бренд
onsemi
Описание
MOSFET N-CH 60V 18A IPAK, N-Channel 60 V 18A (Tc) 40W (Tc) Through Hole I-PAK
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/RFD12N06RLE.jpg
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
63mOhm @ 18A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
485 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
40W (Tc)
FET Type
N-Channel
Supplier Device Package
I-PAK
Series
UltraFET™
Package
Tube
Part Status
Obsolete
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
75
Base Product Number
RFD12
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
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