RFD3055 onsemi
Артикул
RFD3055
Бренд
onsemi
Описание
MOSFET N-CH 60V 12A IPAK, N-Channel 60 V 12A (Tc) 53W (Tc) Through Hole I-PAK
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/RFD3055.jpg
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
Power Dissipation (Max)
53W (Tc)
FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
300 pF @ 25 V
Drain to Source Voltage (Vdss)
60 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
150mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 20 V
Vgs (Max)
±20V
Supplier Device Package
I-PAK
Base Product Number
RFD30
Series
-
Package
Tube
Part Status
Obsolete
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
75
FET Feature
-
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