SI4410DY onsemi
Артикул
SI4410DY
Бренд
onsemi
Описание
MOSFET N-CH 30V 10A 8SOIC, N-Channel 30 V 10A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SI4410DY.jpg
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
13.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
60 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1350 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta)
FET Type
N-Channel
Supplier Device Package
8-SOIC
Other Names
SI4410DYFSTR,SI4410DYCT-ND,SI4410DYCT,SI4410DYFSCT
Series
PowerTrench®
Package
Tape & Reel (TR)Cut Tape (CT)
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
2,500
Base Product Number
SI441
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
Узнайте актуальную цену на данный товар
Оставьте Ваши контактные данные и наш менеджер ответит вам в течение 15 минут