SI4435DY onsemi
Артикул
SI4435DY
Бренд
onsemi
Описание
MOSFET P-CH 30V 8.8A 8SOIC, P-Channel 30 V 8.8A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
Цена
176 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SI4435DY.jpg
Supplier Device Package
8-SOIC
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
8.8A (Ta)
Power Dissipation (Max)
2.5W (Ta)
FET Type
P-Channel
Input Capacitance (Ciss) (Max) @ Vds
1604 pF @ 15 V
Drain to Source Voltage (Vdss)
30 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
20mOhm @ 8.8A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
24 nC @ 5 V
Vgs (Max)
±20V
Other Names
SI4435DYFSTR,SI4435DYFSCT,SI4435DYCT-ND,SI4435DYCT,SI4435DYFSDKR
Base Product Number
SI4435
Series
PowerTrench®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
2,500
FET Feature
-
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