NP55N055SDG-E1-AY Renesas
Артикул
NP55N055SDG-E1-AY
Бренд
Renesas
Описание
MOSFET N-CH 55V 55A TO252, N-Channel 55 V 55A (Tc) 1.2W (Ta), 77W (Tc) Surface Mount TO-252 (MP-3ZK)
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/NP55N055SDG-E1-AY.jpg
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
55A (Tc)
Power Dissipation (Max)
1.2W (Ta), 77W (Tc)
FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
4800 pF @ 25 V
Drain to Source Voltage (Vdss)
55 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
9.5mOhm @ 28A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
96 nC @ 10 V
Vgs (Max)
±20V
Supplier Device Package
TO-252 (MP-3ZK)
Standard Package
2,500
Series
-
Package
Tape & Reel (TR)
Part Status
Obsolete
Operating Temperature
175°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.29.0095
FET Feature
-
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