DTC123JETL Rohm Semiconductor
Артикул
DTC123JETL
Бренд
Rohm Semiconductor
Описание
TRANS PREBIAS NPN 150MW EMT3, Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 150 mW Surface Mount EMT3
Цена
65 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - Bipolar (BJT) - Single, Pre-Biased, Транзисторы - биполярные (BJT) - одиночные, с предварительной изоляцией
Image
files/DTC123JETL.jpg
Mounting Type
Surface Mount
Power - Max
150 mW
Voltage - Collector Emitter Breakdown (Max)
50 V
Current - Collector (Ic) (Max)
100 mA
Current - Collector Cutoff (Max)
500nA
Transistor Type
NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic
300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA, 5V
Frequency - Transition
250 MHz
Resistor - Base (R1)
2.2 kOhms
Standard Package
3,000
Other Names
DTC123JETLDKR,DTC123JETL-ND,DTC123JETLCT,DTC123JETLTR
HTSUS
8541.21.0075
Series
-
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Package / Case
SC-75, SOT-416
Supplier Device Package
EMT3
Base Product Number
DTC123
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
Resistor - Emitter Base (R2)
47 kOhms
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