EMB10T2R Rohm Semiconductor
Артикул
EMB10T2R
Бренд
Rohm Semiconductor
Описание
TRANS 2PNP PREBIAS 0.15W EMT6, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT6
Цена
17 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Транзисторы - биполярные (BJT) - массивы, с предварительным сопряжением
Image
files/EMB10T2R.jpg
Mounting Type
Surface Mount
Power - Max
150mW
Voltage - Collector Emitter Breakdown (Max)
50V
Current - Collector (Ic) (Max)
100mA
Current - Collector Cutoff (Max)
500nA
Transistor Type
2 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic
300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA, 5V
Frequency - Transition
250MHz
Resistor - Base (R1)
2.2kOhms
Standard Package
8,000
Other Names
EMB10T2RDKR,EMB10T2RTR,EMB10T2R-ND,EMB10T2RCT
HTSUS
8541.21.0095
Series
-
Package
Tape & Reel (TR)
Part Status
Active
Package / Case
SOT-563, SOT-666
Supplier Device Package
EMT6
Base Product Number
EMB10
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
Resistor - Emitter Base (R2)
47kOhms
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