R6012ANX Rohm Semiconductor
Артикул
R6012ANX
Бренд
Rohm Semiconductor
Описание
MOSFET N-CH 600V 12A TO220FM, N-Channel 600 V 12A (Ta) 50W (Tc) Through Hole TO-220FM
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/R6012ANX.jpg
Mounting Type
Through Hole
FET Type
N-Channel
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
420mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1300 pF @ 25 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
Standard Package
500
HTSUS
8541.29.0095
Series
-
Package
Bulk
Part Status
Active
Operating Temperature
150°C (TJ)
Package / Case
TO-220-3 Full Pack
Supplier Device Package
TO-220FM
Base Product Number
R6012
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
Power Dissipation (Max)
50W (Tc)
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