R6030ENZ1C9 Rohm Semiconductor
Артикул
R6030ENZ1C9
Бренд
Rohm Semiconductor
Описание
MOSFET N-CH 600V 30A TO247, N-Channel 600 V 30A (Tc) 120W (Tc) Through Hole TO-247
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/R6030ENZ1C9.jpg
Mounting Type
Through Hole
FET Type
N-Channel
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
130mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
85 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2100 pF @ 25 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
Standard Package
450
Series
-
Package
Tube
Part Status
Obsolete
Operating Temperature
150°C (TJ)
Package / Case
TO-247-3
Supplier Device Package
TO-247
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.29.0095
Power Dissipation (Max)
120W (Tc)
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