R6046FNZ1C9 Rohm Semiconductor
Артикул
R6046FNZ1C9
Бренд
Rohm Semiconductor
Описание
MOSFET N-CH 600V 46A TO247, N-Channel 600 V 46A (Tc) 120W (Tc) Through Hole TO-247
Цена
1 951 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/R6046FNZ1C9.jpg
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
46A (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
600 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
98mOhm @ 23A, 10V
Vgs(th) (Max) @ Id
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
150 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
6230 pF @ 25 V
FET Feature
-
Supplier Device Package
TO-247
Package / Case
TO-247-3
REACH Status
REACH Affected
Series
-
Package
Tube
Part Status
Obsolete
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
450
Other Names
846-R6046FNZ1C9
Power Dissipation (Max)
120W (Tc)
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