R8008ANX Rohm Semiconductor
Артикул
R8008ANX
Бренд
Rohm Semiconductor
Описание
MOSFET N-CH 800V 8A TO220FM, N-Channel 800 V 8A (Ta) 50W (Tc) Through Hole TO-220FM
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/R8008ANX.jpg
Mounting Type
Through Hole
FET Type
N-Channel
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.03Ohm @ 4A, 10V
Vgs(th) (Max) @ Id
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
39 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1080 pF @ 25 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
Standard Package
500
HTSUS
8541.29.0095
Series
-
Package
Bulk
Part Status
Active
Operating Temperature
150°C (TJ)
Package / Case
TO-220-3 Full Pack
Supplier Device Package
TO-220FM
Base Product Number
R8008
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
Power Dissipation (Max)
50W (Tc)
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