RCD051N20TL Rohm Semiconductor
Артикул
RCD051N20TL
Бренд
Rohm Semiconductor
Описание
MOSFET N-CH 200V 5A CPT3, N-Channel 200 V 5A (Tc) 850mW (Ta), 20W (Tc) Surface Mount CPT3
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/RCD051N20TL.jpg
Technology
MOSFET (Metal Oxide)
Mounting Type
Surface Mount
FET Type
N-Channel
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
760mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id
5.25V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
8.3 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
330 pF @ 25 V
FET Feature
-
Standard Package
2,500
Other Names
RCD051N20TLDKR,RCD051N20TLTR,RCD051N20TLCT
Series
-
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
150°C (TJ)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
CPT3
Base Product Number
RCD051
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.29.0095
Power Dissipation (Max)
850mW (Ta), 20W (Tc)
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