RD3G07BATTL1 Rohm Semiconductor
Артикул
RD3G07BATTL1
Бренд
Rohm Semiconductor
Описание
PCH -40V -70A POWER MOSFET - RD3, P-Channel 40 V 70A (Ta) 101W (Ta) Surface Mount TO-252
Цена
372 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/RD3G07BATTL1.jpg
Power Dissipation (Max)
101W (Ta)
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
70A (Ta)
Rds On (Max) @ Id, Vgs
7.1mOhm @ 70A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
105 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5550 pF @ 20 V
FET Feature
-
Supplier Device Package
TO-252
Standard Package
2,500
Series
-
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
846-RD3G07BATTL1TR,846-RD3G07BATTL1DKR,846-RD3G07BATTL1CT
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
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