RDN100N20 Rohm Semiconductor
Артикул
RDN100N20
Бренд
Rohm Semiconductor
Описание
MOSFET N-CH 200V 10A TO220FN, N-Channel 200 V 10A (Ta) 35W (Tc) Through Hole TO-220FN
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/RDN100N20.jpg
Mounting Type
Through Hole
FET Type
N-Channel
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
360mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
543 pF @ 10 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
Standard Package
500
Series
-
Package
Bulk
Part Status
Obsolete
Operating Temperature
150°C (TJ)
Package / Case
TO-220-3 Full Pack
Supplier Device Package
TO-220FN
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Power Dissipation (Max)
35W (Tc)
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