RS1E260ATTB1 Rohm Semiconductor
Артикул
RS1E260ATTB1
Бренд
Rohm Semiconductor
Описание
MOSFET P-CH 30V 26A/80A 8HSOP, P-Channel 30 V 26A (Ta), 80A (Tc) 3W (Ta) Surface Mount 8-HSOP
Цена
517 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/RS1E260ATTB1.jpg
Technology
MOSFET (Metal Oxide)
Mounting Type
Surface Mount
FET Type
P-Channel
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
26A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
3.1mOhm @ 26A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
175 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
7850 pF @ 15 V
FET Feature
-
Standard Package
2,500
Other Names
RS1E260ATTB1TR,RS1E260ATTB1DKR,RS1E260ATTB1CT
Series
-
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
150°C (TJ)
Package / Case
8-PowerTDFN
Supplier Device Package
8-HSOP
Base Product Number
RS1E
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.29.0095
Power Dissipation (Max)
3W (Ta)
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