RSR010N10HZGTL Rohm Semiconductor
Артикул
RSR010N10HZGTL
Бренд
Rohm Semiconductor
Описание
MOSFET N-CH 100V 1A TSMT3, N-Channel 100 V 1A (Ta) 700mW (Ta) Surface Mount TSMT3
Цена
112 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/RSR010N10HZGTL.jpg
Supplier Device Package
TSMT3
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
1A (Ta)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
100 V
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Rds On (Max) @ Id, Vgs
520mOhm @ 1A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
3.5 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
140 pF @ 25 V
FET Feature
-
Package / Case
SC-96
REACH Status
REACH Unaffected
Series
Automotive, AEC-Q101
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Base Product Number
RSR010
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
Standard Package
3,000
Other Names
846-RSR010N10HZGTLCT,846-RSR010N10HZGTLDKR,846-RSR010N10HZGTLTR
Power Dissipation (Max)
700mW (Ta)
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