SCT2H12NYTB Rohm Semiconductor
Артикул
SCT2H12NYTB
Бренд
Rohm Semiconductor
Описание
SICFET N-CH 1700V 4A TO268, N-Channel 1700 V 4A (Tc) 44W (Tc) Surface Mount TO-268
Цена
999 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SCT2H12NYTB.jpg
Technology
SiCFET (Silicon Carbide)
Mounting Type
Surface Mount
FET Type
N-Channel
Drain to Source Voltage (Vdss)
1700 V
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
1.5Ohm @ 1.1A, 18V
Vgs(th) (Max) @ Id
4V @ 410µA
Gate Charge (Qg) (Max) @ Vgs
14 nC @ 18 V
Vgs (Max)
+22V, -6V
Input Capacitance (Ciss) (Max) @ Vds
184 pF @ 800 V
FET Feature
-
Standard Package
400
Other Names
SCT2H12NYTBTR,SCT2H12NYTBCT,SCT2H12NYTBDKR
Series
-
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
175°C (TJ)
Package / Case
TO-268-3, D?Pak (2 Leads + Tab), TO-268AA
Supplier Device Package
TO-268
Base Product Number
SCT2H12
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Power Dissipation (Max)
44W (Tc)
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