SCT3060ALGC11 Rohm Semiconductor
Артикул
SCT3060ALGC11
Бренд
Rohm Semiconductor
Описание
SICFET N-CH 650V 39A TO247N, N-Channel 650 V 39A (Tc) 165W (Tc) Through Hole TO-247N
Цена
2 132 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SCT3060ALGC11.jpg
Mounting Type
Through Hole
FET Type
N-Channel
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
39A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
78mOhm @ 13A, 18V
Vgs(th) (Max) @ Id
5.6V @ 6.67mA
Gate Charge (Qg) (Max) @ Vgs
58 nC @ 18 V
Vgs (Max)
+22V, -4V
Input Capacitance (Ciss) (Max) @ Vds
852 pF @ 500 V
FET Feature
-
Technology
SiCFET (Silicon Carbide)
Standard Package
30
HTSUS
8541.29.0095
Series
-
Package
Tube
Part Status
Active
Operating Temperature
175°C (TJ)
Package / Case
TO-247-3
Supplier Device Package
TO-247N
Base Product Number
SCT3060
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
Power Dissipation (Max)
165W (Tc)
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