MJ10012 Solid State
Артикул
MJ10012
Бренд
Solid State
Описание
TO 3 10 AMP DARLINGTON TRANSISTO, Bipolar (BJT) Transistor NPN - Darlington 600 V 10 A - 175 W Through Hole TO-3
Цена
632 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - Bipolar (BJT) - Single, Транзисторы - биполярные (BJT) - одиночные
Image
files/MJ10012.jpg
Supplier Device Package
TO-3
REACH Status
Vendor Undefined
Power - Max
175 W
Transistor Type
NPN - Darlington
Current - Collector (Ic) (Max)
10 A
Voltage - Collector Emitter Breakdown (Max)
600 V
Vce Saturation (Max) @ Ib, Ic
2.5V @ 2A, 10A
Current - Collector Cutoff (Max)
1mA
DC Current Gain (hFE) (Min) @ Ic, Vce
300 @ 3A, 6V
Package / Case
TO-204AA, TO-3
Operating Temperature
-65°C ~ 200°C (TJ)
Standard Package
10
Series
SWITCHMODE
Package
Bulk
Part Status
Active
Mounting Type
Through Hole
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.10.0080
Other Names
2383-MJ10012
Frequency - Transition
-
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