MJ10016 Solid State
Артикул
MJ10016
Бренд
Solid State
Описание
TO 3 DARLINGTON SILICON TRANSIST, Bipolar (BJT) Transistor NPN - Darlington 500 V 50 A - 250 W Through Hole TO-3
Цена
976 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - Bipolar (BJT) - Single, Транзисторы - биполярные (BJT) - одиночные
Image
files/MJ10016.jpg
Supplier Device Package
TO-3
REACH Status
Vendor Undefined
Power - Max
250 W
Transistor Type
NPN - Darlington
Current - Collector (Ic) (Max)
50 A
Voltage - Collector Emitter Breakdown (Max)
500 V
Vce Saturation (Max) @ Ib, Ic
5V @ 10A, 50A
Current - Collector Cutoff (Max)
250µA
DC Current Gain (hFE) (Min) @ Ic, Vce
25 @ 20A, 5V
Package / Case
TO-204AA, TO-3
Operating Temperature
-65°C ~ 200°C (TJ)
Standard Package
10
Series
SWITCHMODE
Package
Bulk
Part Status
Active
Mounting Type
Through Hole
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.10.0080
Other Names
2383-MJ10016
Frequency - Transition
-
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