2N7000 STMicroelectronics
Артикул
2N7000
Бренд
STMicroelectronics
Описание
MOSFET N-CH 60V 350MA TO92-3, N-Channel 60 V 350mA (Tc) 1W (Tc) Through Hole TO-92-3
Цена
179 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/2N7000.jpg
Base Product Number
2N70
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
350mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
2 nC @ 5 V
Vgs (Max)
±18V
Input Capacitance (Ciss) (Max) @ Vds
43 pF @ 25 V
FET Feature
-
Other Names
497-3110-NDR,497-3110
REACH Status
REACH Unaffected
Series
STripFET™
Package
Bulk
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package
TO-92-3
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
2,500
Power Dissipation (Max)
1W (Tc)
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