BU808DFI STMicroelectronics
Артикул
BU808DFI
Бренд
STMicroelectronics
Описание
TRANS NPN DARL 700V ISOWATT218, Bipolar (BJT) Transistor NPN - Darlington 700 V 8 A - 52 W Through Hole ISOWATT-218
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - Bipolar (BJT) - Single, Транзисторы - биполярные (BJT) - одиночные
Image
files/BU808DFI.jpg
REACH Status
REACH Unaffected
Base Product Number
BU808
Power - Max
52 W
Transistor Type
NPN - Darlington
Current - Collector (Ic) (Max)
8 A
Voltage - Collector Emitter Breakdown (Max)
700 V
Vce Saturation (Max) @ Ib, Ic
1.6V @ 500mA, 5A
Current - Collector Cutoff (Max)
400µA
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 5A, 5V
Standard Package
300
HTSUS
8541.29.0095
ECCN
EAR99
Series
-
Package
Tube
Part Status
Obsolete
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
ISOWATT-218-3
Supplier Device Package
ISOWATT-218
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Frequency - Transition
-
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