IRF630FP STMicroelectronics
Артикул
IRF630FP
Бренд
STMicroelectronics
Описание
MOSFET N-CH 200V 9A TO220FP, N-Channel 200 V 9A (Tc) 30W (Tc) Through Hole TO-220FP
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRF630FP.jpg
Base Product Number
IRF6
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
400mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
700 pF @ 25 V
FET Feature
-
Other Names
497-12489-5,IRF630FP-ND
REACH Status
REACH Unaffected
Series
MESH OVERLAY™ II
Package
Tube
Part Status
Obsolete
Operating Temperature
-65°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Supplier Device Package
TO-220FP
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
50
Power Dissipation (Max)
30W (Tc)
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