IRFP250 STMicroelectronics
Артикул
IRFP250
Бренд
STMicroelectronics
Описание
MOSFET N-CH 200V 33A TO247-3, N-Channel 200 V 33A (Tc) 180W (Tc) Through Hole TO-247-3
Цена
451 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRFP250.jpg
Base Product Number
IRFP
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
85mOhm @ 16A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
158 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2850 pF @ 25 V
FET Feature
-
Other Names
497-2639-5
REACH Status
REACH Unaffected
Series
PowerMESH™ II
Package
Tube
Part Status
Obsolete
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247-3
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
30
Power Dissipation (Max)
180W (Tc)
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