MD2009DFX STMicroelectronics
Артикул
MD2009DFX
Бренд
STMicroelectronics
Описание
TRANS NPN 700V 10A ISOWATT218FX, Bipolar (BJT) Transistor NPN 700 V 10 A - 58 W Through Hole TO-3PF
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - Bipolar (BJT) - Single, Транзисторы - биполярные (BJT) - одиночные
Image
files/MD2009DFX.jpg
REACH Status
REACH Unaffected
Base Product Number
MD2009
Power - Max
58 W
Transistor Type
NPN
Current - Collector (Ic) (Max)
10 A
Voltage - Collector Emitter Breakdown (Max)
700 V
Vce Saturation (Max) @ Ib, Ic
2.8V @ 1.4A, 5.5A
Current - Collector Cutoff (Max)
200µA
DC Current Gain (hFE) (Min) @ Ic, Vce
5 @ 5.5A, 5V
Standard Package
30
HTSUS
8541.29.0095
ECCN
EAR99
Series
-
Package
Tube
Part Status
Obsolete
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-3P-3 Full Pack
Supplier Device Package
TO-3PF
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Frequency - Transition
-
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