MJD112T4 STMicroelectronics
Артикул
MJD112T4
Бренд
STMicroelectronics
Описание
TRANS NPN DARL 100V 2A DPAK, Bipolar (BJT) Transistor NPN - Darlington 100 V 2 A 25MHz 20 W Surface Mount DPAK
Цена
143 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - Bipolar (BJT) - Single, Транзисторы - биполярные (BJT) - одиночные
Image
files/MJD112T4.jpg
REACH Status
REACH Unaffected
Other Names
497-2462-2-NDR,497-2462-1-NDR,497-2462-1,497-2462-2,497-2462-6,1026-MJD112T4
Base Product Number
MJD112
Power - Max
20 W
Transistor Type
NPN - Darlington
Current - Collector (Ic) (Max)
2 A
Voltage - Collector Emitter Breakdown (Max)
100 V
Vce Saturation (Max) @ Ib, Ic
3V @ 40mA, 4A
Current - Collector Cutoff (Max)
20µA
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 2A, 3V
Standard Package
2,500
HTSUS
8541.29.0095
Series
-
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
DPAK
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
Frequency - Transition
25MHz
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