MJD122-1 STMicroelectronics
Артикул
MJD122-1
Бренд
STMicroelectronics
Описание
TRANS NPN DARL 100V 8A TO251, Bipolar (BJT) Transistor NPN - Darlington 100 V 8 A - 20 W Through Hole TO-251 (IPAK)
Цена
158 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - Bipolar (BJT) - Single, Транзисторы - биполярные (BJT) - одиночные
Image
files/MJD122-1.jpg
REACH Status
REACH Unaffected
Other Names
MJD122-1-ND,497-16183
Base Product Number
MJD122
Power - Max
20 W
Transistor Type
NPN - Darlington
Current - Collector (Ic) (Max)
8 A
Voltage - Collector Emitter Breakdown (Max)
100 V
Vce Saturation (Max) @ Ib, Ic
4V @ 80mA, 8A
Current - Collector Cutoff (Max)
10µA
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 4A, 4V
Standard Package
75
HTSUS
8541.29.0095
Series
-
Package
Bulk
Part Status
Active
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package
TO-251 (IPAK)
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
Frequency - Transition
-
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