MJE802 STMicroelectronics
Артикул
MJE802
Бренд
STMicroelectronics
Описание
TRANS NPN DARL 80V 4A SOT-32, Bipolar (BJT) Transistor NPN - Darlington 80 V 4 A - 40 W Through Hole SOT-32
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - Bipolar (BJT) - Single, Транзисторы - биполярные (BJT) - одиночные
Image
files/MJE802.jpg
REACH Status
REACH Unaffected
Other Names
1026-MJE802,497-2549-5,497-2549-5-NDR
Base Product Number
MJE802
Power - Max
40 W
Transistor Type
NPN - Darlington
Current - Collector (Ic) (Max)
4 A
Voltage - Collector Emitter Breakdown (Max)
80 V
Vce Saturation (Max) @ Ib, Ic
3V @ 40mA, 4A
Current - Collector Cutoff (Max)
100nA
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 1.5A, 3V
Standard Package
50
HTSUS
8541.29.0095
Series
-
Package
Tube
Part Status
Obsolete
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Supplier Device Package
SOT-32
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
Frequency - Transition
-
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