SCT30N120H STMicroelectronics
Артикул
SCT30N120H
Бренд
STMicroelectronics
Описание
SICFET N-CH 1200V 40A H2PAK-2, N-Channel 1200 V 40A (Tc) 270W (Tc) Surface Mount H2Pak-2
Цена
3 837 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SCT30N120H.jpg
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
100mOhm @ 20A, 20V
Vgs(th) (Max) @ Id
3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
105 nC @ 20 V
Vgs (Max)
+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds
1700 pF @ 400 V
FET Feature
-
Base Product Number
SCT30
Other Names
497-SCT30N120HDKR,SCT30N120H-ND,497-SCT30N120HTR,497-SCT30N120HCT
Series
-
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 200°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-3, D?Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
H2Pak-2
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
1,000
REACH Status
REACH Unaffected
Power Dissipation (Max)
270W (Tc)
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