SCTW100N65G2AG STMicroelectronics
Артикул
SCTW100N65G2AG
Бренд
STMicroelectronics
Описание
SICFET N-CH 650V 100A HIP247, N-Channel 650 V 100A (Tc) 420W (Tc) Through Hole HiP247™
Цена
6 814 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SCTW100N65G2AG.jpg
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
26mOhm @ 50A, 18V
Vgs(th) (Max) @ Id
5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
162 nC @ 18 V
Vgs (Max)
+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds
3315 pF @ 520 V
FET Feature
-
Base Product Number
SCTW100
Supplier Device Package
HiP247™
Package / Case
TO-247-3
Series
Automotive, AEC-Q101
Package
Tube
Part Status
Active
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 200°C (TJ)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
497-SCTW100N65G2AG
Standard Package
30
Power Dissipation (Max)
420W (Tc)
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