SCTW40N120G2V STMicroelectronics
Артикул
SCTW40N120G2V
Бренд
STMicroelectronics
Описание
SILICON CARBIDE POWER MOSFET 120, N-Channel 1200 V 36A (Tc) 278W (Tc) Through Hole HiP247™
Цена
3 545 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Series
-
Technology
SiCFET (Silicon Carbide)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
100mOhm @ 20A, 18V
Vgs(th) (Max) @ Id
4.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
61 nC @ 18 V
Vgs (Max)
+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds
1233 pF @ 800 V
FET Feature
-
Supplier Device Package
HiP247™
REACH Status
REACH Unaffected
Package
Tube
Part Status
Active
Operating Temperature
-55°C ~ 200°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
497-SCTW40N120G2V
Standard Package
30
Power Dissipation (Max)
278W (Tc)
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