SCTW70N120G2V STMicroelectronics
Артикул
SCTW70N120G2V
Бренд
STMicroelectronics
Описание
TRANS SJT N-CH 1200V 91A HIP247, N-Channel 1200 V 91A (Tc) 547W (Tc) Through Hole HiP247™
Цена
7 573 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SCTW70N120G2V.jpg
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C
91A (Tc)
Rds On (Max) @ Id, Vgs
30mOhm @ 50A, 18V
Vgs(th) (Max) @ Id
4.9V @ 1mA
Vgs (Max)
+22V, -10V
FET Feature
-
Power Dissipation (Max)
547W (Tc)
Drain to Source Voltage (Vdss)
1200 V
Gate Charge (Qg) (Max) @ Vgs
150 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds
3540 pF @ 800 V
REACH Status
REACH Unaffected
Supplier Device Package
HiP247™
Package / Case
TO-247-3
Series
-
Package
Tube
Part Status
Active
Operating Temperature
-55°C ~ 200°C (TJ)
Mounting Type
Through Hole
Base Product Number
SCTW70
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
497-SCTW70N120G2V
Standard Package
30
Drive Voltage (Max Rds On, Min Rds On)
18V
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