SGSD100 STMicroelectronics
Артикул
SGSD100
Бренд
STMicroelectronics
Описание
TRANS NPN DARL 80V 25A TO-247, Bipolar (BJT) Transistor NPN - Darlington 80 V 25 A - 130 W Through Hole TO-247-3
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - Bipolar (BJT) - Single, Транзисторы - биполярные (BJT) - одиночные
Image
files/SGSD100.jpg
REACH Status
REACH Unaffected
Other Names
SGSD100-ND,497-6727-5
Base Product Number
SGSD100
Power - Max
130 W
Transistor Type
NPN - Darlington
Current - Collector (Ic) (Max)
25 A
Voltage - Collector Emitter Breakdown (Max)
80 V
Vce Saturation (Max) @ Ib, Ic
3.5V @ 80mA, 20A
Current - Collector Cutoff (Max)
500µA
DC Current Gain (hFE) (Min) @ Ic, Vce
500 @ 10A, 3V
Standard Package
30
HTSUS
8541.29.0095
Series
-
Package
Tube
Part Status
Obsolete
Operating Temperature
-
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247-3
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
Frequency - Transition
-
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