STB11NM80T4 STMicroelectronics
Артикул
STB11NM80T4
Бренд
STMicroelectronics
Описание
MOSFET N-CH 800V 11A D2PAK, N-Channel 800 V 11A (Tc) 150W (Tc) Surface Mount D2PAK
Цена
1 302 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/STB11NM80T4.jpg
Base Product Number
STB11
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
400mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
43.6 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1630 pF @ 25 V
FET Feature
-
Other Names
497-4319-1-ND,497-4319-1,497-4319-2,497-4319-1-NDR,497-4319-6,-1138-STB11NM80T4CT,-1138-STB11NM80T4DKR,497-STB11NM80T4TR,497-4319-2-NDR,497-STB11NM80T4DKR,497-4319-6-ND,497-STB11NM80T4CT,497-4319-2-ND,-1138-STB11NM80T4TR
REACH Status
REACH Unaffected
Series
MDmesh™
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-65°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-3, D?Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
D2PAK
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
1,000
Power Dissipation (Max)
150W (Tc)
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