STB120NF10T4 STMicroelectronics
Артикул
STB120NF10T4
Бренд
STMicroelectronics
Описание
MOSFET N-CH 100V 110A D2PAK, N-Channel 100 V 110A (Tc) 312W (Tc) Surface Mount D2PAK
Цена
682 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/STB120NF10T4.jpg
Base Product Number
STB120
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
10.5mOhm @ 60A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
233 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5200 pF @ 25 V
FET Feature
-
Other Names
497-2452-2-NDR,497-2452-1-NDR,497-2452-1,497-2452-2,497-2452-6
REACH Status
REACH Unaffected
Series
STripFET™ II
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-3, D?Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
D2PAK
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
1,000
Power Dissipation (Max)
312W (Tc)
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