STB155N3LH6 STMicroelectronics
Артикул
STB155N3LH6
Бренд
STMicroelectronics
Описание
MOSFET N-CH 30V 80A D2PAK, N-Channel 30 V 80A (Tc) 110W (Tc) Surface Mount D?PAK (TO-263)
Цена
400 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/STB155N3LH6.jpg
Base Product Number
STB155
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
3mOhm @ 40A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
80 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3800 pF @ 25 V
FET Feature
-
Other Names
497-11323-1,-497-11323-5-ND,497-11323-2,-497-11323-5,-497-11323-6,-497-11323-1,-497-11323-2,497-11323-5,497-11323-5-ND,497-11323-6
REACH Status
REACH Unaffected
Series
DeepGATE™, STripFET™ VI
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-3, D?Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
D?PAK (TO-263)
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
1,000
Power Dissipation (Max)
110W (Tc)
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