STB18NM60N STMicroelectronics
Артикул
STB18NM60N
Бренд
STMicroelectronics
Описание
MOSFET N-CH 600V 13A D2PAK, N-Channel 600 V 13A (Tc) 110W (Tc) Surface Mount D?PAK (TO-263)
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/STB18NM60N.jpg
Base Product Number
STB18N
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
285mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
1000 pF @ 50 V
FET Feature
-
Other Names
497-10297-6,-497-10297-6,497-10297-1,497-10297-2,-497-10297-2,-497-10297-1
REACH Status
REACH Unaffected
Series
MDmesh™ II
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-3, D?Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
D?PAK (TO-263)
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
1,000
Power Dissipation (Max)
110W (Tc)
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